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| Datasheet File OCR Text: |
| NTE452 Silicon N-Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N-channel junction field effect tranistor (JFET) in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 1s, VDS = 0 IGSS VGS(off) VGS VGS(f) IDSS |Yfs| Yfs(real) VGS = 20V, VDS = 0 VGS = 20V, VDS = 0, TA = +150C Gate-Source Cutoff Voltage Gate-Source Voltage Gate-Source Forward Voltage ON Characteristics (Note 1) Zero-Gate Voltage Drain Current Small-Signal Characteristics Forward Transfer Admittance Real Part of Forward Transfer Admittance VDS = 15V, VGS = 0, f = 1kHz, Note 1 VDS = 15V, VGS = 0, f = 400MHz 4500 4000 - - 7500 mhos - mhos VDS = 15V, VGS = 0 5 - 15 mA ID = 1nA, VDS = 15V ID = 0.5mA, VDS = 15V IG = 1mA, VDS = 0 30 - - - 1.0 - - - - - - - - 100 200 6 5.5 1.0 V pA pA V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 1%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit mhos mhos mhos mhos mhos Small-Signal Characteristics (Cont'd) Real Part of Input Admittance Yis(real) |Yos| Yos(real) Yis(imag) Yos(imag) Ciss Crss Coss VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 400MHz Output Admittance Real Part of Output Admittance VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 400MHz Imaginary Part of Input Admittance VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 400MHz Imaginary Part of Output Admittance Input Capacitance Reverse Transfer Capacitance Common-Source Output Capacitance Functional Characteristics Noise Figure NF VDS = 15V, ID = 5mA, Rg 1000, f = 100MHz VDS = 15V, ID = 5mA, Rg 1000, f = 400MHz Small-Signal Power Gain Common-Source Gps VDS = 15V, ID = 5mA, f = 100MHz VDS = 15V, ID = 5mA, f = 400MHz .220 (5.58) Dia .185 (4.7) Dia - - - - - - - - - - - - - - - - - - - - - - - - 100 1000 mhos 50 75 100 2500 mhos 10k 1000 mhos 4000 mhos 4.0 0.8 2.0 pF pF pF VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 400MHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz - - 18 10 - - - - 2.0 4.0 - - dB dB dB dB .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Drain Source Gate 45 Case .040 (1.02) |
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